advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance ch-1 bv dss 30v fast switching characteristic r ds(on) 18m surface mount package i d 8.5a ch-2 bv dss 30v r ds(on) 26m description i d 7.3a absolute maximum ratings symbol parameter rating units ch-1 ch2 v ds drain-source voltage 30 30 v v gs gate-source voltage 25 25 v i d @t a =25 continuous drain current 3 8.5 7.3 a i d @t a =70 continuous drain current 3 6.8 5.8 a i dm pulsed drain current 1 30 30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice parameter 201220042 thermal data AP6982GM pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - 15 18 m v gs =4.5v, i d =6a - 23 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =8a - 12 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =25v - - 100 na q g total gate charge 2 i d =8a - 14 22 nc q gs gate-source charge v ds =24v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 8 - nc t d(on) turn-on delay time 2 v ds =15v - 12 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 25 - ns t f fall time r d =15 -9- ns c iss input capacitance v gs =0v - 1050 1680 pf c oss output capacitance v ds =25v - 240 - pf c rss reverse transfer capacitance f=1.0mhz - 165 - pf r g gate resistance f=1.0mhz - 1.6 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =8a, v gs =0v - 23 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc AP6982GM
AP6982GM ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - 22 26 m v gs =4.5v, i d =5a - 36 45 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =25v - - 100 na q g total gate charge 2 i d =7a - 9 15 nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 19 - ns t f fall time r d =15 -6- ns c iss input capacitance v gs =0v - 640 1030 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 105 - pf r g gate resistance f=1.0mhz - 1.7 2.5 source-drain diod e symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =7a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 135 /w when mounted on min. copper pad.
channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP6982GM 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 12 16 20 24 28 246810 v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =6a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP6982GM channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g 4.5v q gs q gd q g charge 0 10 20 30 40 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =8a v ds =16v v ds =20v v ds =24v 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 1ms 10ms 100ms 1s 10s dc t a =25 o c single pulse
channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP6982GM 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 30 40 50 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP6982GM channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g 4.5v q gs q gd q g charge 0 10 20 30 40 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 4 8 12 16 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =16v v ds =20v v ds =24v 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm t t 0.02 0.02 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s 10s dc t a =25 o c single pulse
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